Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin
Identifieur interne : 000000 ( Russie/Analysis ); suivant : 000001Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin
Auteurs : RBID : Pascal:14-0089706Descripteurs français
- Pascal (Inist)
- Oxyde d'indium, Couche mince, Addition étain, Matériau thermoélectrique, Addition indium, Pyrolyse, Diffraction RX, Microscopie électronique balayage, Microscopie force atomique, Propriété thermoélectrique, Conductivité électrique, Effet Seebeck, Dépendance température, Nanostructure, Réseau cubique, Cristallite, Humidité, Conductivité superficielle, Vapeur eau, In2O3, 6855J, 7350L, 7361, 8107.
English descriptors
- KwdEn :
- Atomic force microscopy, Crystallites, Cubic lattices, Electrical conductivity, Humidity, Indium additions, Indium oxide, Nanostructures, Pyrolysis, Scanning electron microscopy, Seebeck effect, Steam, Surface conductivity, Temperature dependence, Thermoelectric materials, Thermoelectric properties, Thin films, Tin additions, XRD.
Abstract
The search for materials with thermoelectric parameters capable of operating at high temperatures continues to be of great interest; n-type metal oxides are promising candidates. Here, two series of thin (˜100 nm) indium oxide films doped by tin (from 0 to 50 at%) were deposited by spray pyrolysis at 350 °C and 450 °C. Characterization of the films was performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Thermoelectric properties, i.e., the conductivity and the Seebeck coefficient, were then studied over a temperature range of 20-450 °C. It was shown that these parameters as well as their nanostructure were strongly dependent on the Sn content and deposition temperature. Specifically, the conductivity had maxima near 5% and 20% for films deposited at 350 °C and 450 °C, respectively. The power factor (PF) as a function of Sn content also demonstrated non-monotonous behavior with two maxima; for films deposited at 350 °C these maxima were again observed near 5% and 20% of Sn content. The maximal PF value equaled to 4.7 mW/( m.K2) at a temperature of 450 °C was observed at 5 at.% Sn. This result is one of the best ever obtained for metal oxides in a given temperature range. The optimal films were characterized by a cubic-like crystallite nanostructure with {400} surface faceting. A model explaining such high parameters was subsequently proposed. We also determined the effect of ambient humidity on the thermoelectric properties of nanostructured In2O3:Sn films at an operating temperature range below 400 °C, which is caused by the change of surface conductivity under the influence of water vapor.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin</title><author><name sortKey="Brinzari, V" uniqKey="Brinzari V">V. Brinzari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State University of Moldova, Chisinau, Republic of Moldova</s1><s3>MDA</s3><sZ>1 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>State University of Moldova, Chisinau, Republic of Moldova</wicri:noRegion></affiliation></author><author><name sortKey="Damaskin, I" uniqKey="Damaskin I">I. Damaskin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Academy of Science of Moldova, Chisinau, Republic of Moldova</s1><s3>MDA</s3><sZ>2 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>Academy of Science of Moldova, Chisinau, Republic of Moldova</wicri:noRegion></affiliation></author><author><name sortKey="Trakhtenberg, L" uniqKey="Trakhtenberg L">L. Trakhtenberg</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Semenov Institute of Chemical Physics</s1><s2>Moscow</s2><s3>RUS</s3><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Moscow Institute of Physics and Technology, Moscow Region</s1><s2>Dolgoprudny</s2><s3>RUS</s3><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Dolgoprudny</wicri:noRegion></affiliation></author><author><name sortKey="Cho, B K" uniqKey="Cho B">B. K. Cho</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Gwangju Institute of Science and Technology</s1><s2>Gwangju</s2><s3>KOR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Gwangju Institute of Science and Technology</wicri:noRegion></affiliation></author><author><name sortKey="Korotcenkov, G" uniqKey="Korotcenkov G">G. Korotcenkov</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Gwangju Institute of Science and Technology</s1><s2>Gwangju</s2><s3>KOR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Gwangju Institute of Science and Technology</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0089706</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0089706 INIST</idno><idno type="RBID">Pascal:14-0089706</idno><idno type="wicri:Area/Main/Corpus">000063</idno><idno type="wicri:Area/Main/Repository">000012</idno><idno type="wicri:Area/Russie/Extraction">000000</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Crystallites</term><term>Cubic lattices</term><term>Electrical conductivity</term><term>Humidity</term><term>Indium additions</term><term>Indium oxide</term><term>Nanostructures</term><term>Pyrolysis</term><term>Scanning electron microscopy</term><term>Seebeck effect</term><term>Steam</term><term>Surface conductivity</term><term>Temperature dependence</term><term>Thermoelectric materials</term><term>Thermoelectric properties</term><term>Thin films</term><term>Tin additions</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Oxyde d'indium</term><term>Couche mince</term><term>Addition étain</term><term>Matériau thermoélectrique</term><term>Addition indium</term><term>Pyrolyse</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Microscopie force atomique</term><term>Propriété thermoélectrique</term><term>Conductivité électrique</term><term>Effet Seebeck</term><term>Dépendance température</term><term>Nanostructure</term><term>Réseau cubique</term><term>Cristallite</term><term>Humidité</term><term>Conductivité superficielle</term><term>Vapeur eau</term><term>In2O3</term><term>6855J</term><term>7350L</term><term>7361</term><term>8107</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The search for materials with thermoelectric parameters capable of operating at high temperatures continues to be of great interest; n-type metal oxides are promising candidates. Here, two series of thin (˜100 nm) indium oxide films doped by tin (from 0 to 50 at%) were deposited by spray pyrolysis at 350 °C and 450 °C. Characterization of the films was performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Thermoelectric properties, i.e., the conductivity and the Seebeck coefficient, were then studied over a temperature range of 20-450 °C. It was shown that these parameters as well as their nanostructure were strongly dependent on the Sn content and deposition temperature. Specifically, the conductivity had maxima near 5% and 20% for films deposited at 350 °C and 450 °C, respectively. The power factor (PF) as a function of Sn content also demonstrated non-monotonous behavior with two maxima; for films deposited at 350 °C these maxima were again observed near 5% and 20% of Sn content. The maximal PF value equaled to 4.7 mW/( m.K<sup>2</sup>) at a temperature of 450 °C was observed at 5 at.% Sn. This result is one of the best ever obtained for metal oxides in a given temperature range. The optimal films were characterized by a cubic-like crystallite nanostructure with {400} surface faceting. A model explaining such high parameters was subsequently proposed. We also determined the effect of ambient humidity on the thermoelectric properties of nanostructured In<sub>2</sub>O<sub>3</sub>:Sn films at an operating temperature range below 400 °C, which is caused by the change of surface conductivity under the influence of water vapor.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>552</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin</s1></fA08><fA11 i1="01" i2="1"><s1>BRINZARI (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>DAMASKIN (I.)</s1></fA11><fA11 i1="03" i2="1"><s1>TRAKHTENBERG (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHO (B. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>KOROTCENKOV (G.)</s1></fA11><fA14 i1="01"><s1>State University of Moldova, Chisinau, Republic of Moldova</s1><s3>MDA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Academy of Science of Moldova, Chisinau, Republic of Moldova</s1><s3>MDA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Semenov Institute of Chemical Physics</s1><s2>Moscow</s2><s3>RUS</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Moscow Institute of Physics and Technology, Moscow Region</s1><s2>Dolgoprudny</s2><s3>RUS</s3><sZ>3 aut.</sZ></fA14><fA14 i1="05"><s1>Gwangju Institute of Science and Technology</s1><s2>Gwangju</s2><s3>KOR</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>225-231</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000505786330360</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>38 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0089706</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The search for materials with thermoelectric parameters capable of operating at high temperatures continues to be of great interest; n-type metal oxides are promising candidates. Here, two series of thin (˜100 nm) indium oxide films doped by tin (from 0 to 50 at%) were deposited by spray pyrolysis at 350 °C and 450 °C. Characterization of the films was performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. Thermoelectric properties, i.e., the conductivity and the Seebeck coefficient, were then studied over a temperature range of 20-450 °C. It was shown that these parameters as well as their nanostructure were strongly dependent on the Sn content and deposition temperature. Specifically, the conductivity had maxima near 5% and 20% for films deposited at 350 °C and 450 °C, respectively. The power factor (PF) as a function of Sn content also demonstrated non-monotonous behavior with two maxima; for films deposited at 350 °C these maxima were again observed near 5% and 20% of Sn content. The maximal PF value equaled to 4.7 mW/( m.K<sup>2</sup>) at a temperature of 450 °C was observed at 5 at.% Sn. This result is one of the best ever obtained for metal oxides in a given temperature range. The optimal films were characterized by a cubic-like crystallite nanostructure with {400} surface faceting. A model explaining such high parameters was subsequently proposed. We also determined the effect of ambient humidity on the thermoelectric properties of nanostructured In<sub>2</sub>O<sub>3</sub>:Sn films at an operating temperature range below 400 °C, which is caused by the change of surface conductivity under the influence of water vapor.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C50L</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A07Z</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Indium oxide</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Indio óxido</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Addition étain</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Tin additions</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Matériau thermoélectrique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Thermoelectric materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Addition indium</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium additions</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Pyrolyse</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Pyrolysis</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>XRD</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Scanning electron microscopy</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Propriété thermoélectrique</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Thermoelectric properties</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Effet Seebeck</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Seebeck effect</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Dépendance température</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Nanostructure</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Nanostructures</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Réseau cubique</s0><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Cubic lattices</s0><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Cristallite</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Crystallites</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Humidité</s0><s5>31</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Humidity</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Conductivité superficielle</s0><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Surface conductivity</s0><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Vapeur eau</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Steam</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>In2O3</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>6855J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>7350L</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>7361</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>118</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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